IRFB23N20DPBF
IRFB23N20DPBF
Part Number IRFB23N20DPBF Description MOSFET N-CH 200V 24A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
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IRFB23N20DPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB23N20DPbF, IRFS(L)23N20DPbF Standard Package 1000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 170W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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