FDB9403-F085
FDB9403-F085
Part Number FDB9403-F085
Description MOSFET N-CH 40V 110A TO263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 110A (Tc) 333W (Tj) Surface Mount TO-263AB
To learn about the specification of FDB9403-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB9403-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB9403-F085.
We are offering FDB9403-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDB9403-F085 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB9403_F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 213nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
FET Feature -
Power Dissipation (Max) 333W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB9403-F085 - Related ProductsMore >>
AUIRFS4310Z
Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®
View
IPB65R190CFDATMA1
Infineon Technologies, N-Channel 650V 17.5A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
CDM2208-800FP SL
Central Semiconductor Corp, N-Channel 800V 8A (Tc) 57W (Tc) Through Hole TO-220FP,
View
SI1070X-T1-GE3
Vishay Siliconix, N-Channel 30V 236mW (Ta) Surface Mount SC-89-6, TrenchFET®
View
APT38F80L
Microsemi Corporation, N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole TO-264 [L], POWER MOS 8™
View
SI4490DY-T1-GE3
Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
PSMN011-60MSX
Nexperia USA Inc., N-Channel 60V 61A (Tc) 91W (Tc) Surface Mount LFPAK33,
View
IRF7601TRPBF
Infineon Technologies, N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
View
TK10E60W,S1VX
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220, DTMOSIV
View
IRFPC40PBF
Vishay Siliconix, N-Channel 600V 6.8A (Tc) 150W (Tc) Through Hole TO-247-3,
View
FDD4N60NZ
ON Semiconductor, N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount DPAK, UniFET-II™
View
BSP716NH6327XTSA1
Infineon Technologies, N-Channel 75V 2.3A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™
View
FDB9403-F085 - Tags