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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7606-75B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7446pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-220AB,
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IRFP244PBF
Vishay Siliconix, N-Channel 250V 15A (Tc) 150W (Tc) Through Hole TO-247-3,
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STL15N60M2-EP
STMicroelectronics, N-Channel 600V 7A (Tc) 55W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2-EP
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TSM038N04LCP ROG
Taiwan Semiconductor Corporation, N-Channel 40V 135A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),
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IPT004N03LATMA1
Infineon Technologies, N-Channel 30V 300A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
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SI4850BDY-T1-GE3
Vishay Siliconix, N-Channel 60V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SO, TrenchFET® Gen IV
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SQJQ100E-T1_GE3
Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®
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SIRA24DP-T1-GE3
Vishay Siliconix, N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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STF28N60DM2
STMicroelectronics, N-Channel 600V 21A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ DM2
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IRL540PBF
Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,
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FDS8870
ON Semiconductor, N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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PSMN1R4-30YLDX
Nexperia USA Inc., N-Channel 30V 100A (Tc) 166W (Tc) Surface Mount LFPAK56, Power-SO8,
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