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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7607-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3760pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R5011FNX
Rohm Semiconductor, N-Channel 500V 11A (Ta), 5.4A (Tc) 50W (Tc) Through Hole TO-220FM,
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IPD22N08S2L50ATMA1
Infineon Technologies, N-Channel 75V 27A (Tc) 75W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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FDP120N10
ON Semiconductor, N-Channel 100V 74A (Tc) 170W (Tc) Through Hole TO-220-3, PowerTrench®
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NDB5060L
ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),
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STP7N60M2
STMicroelectronics, N-Channel 600V 5A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™ II Plus
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SIHG80N60EF-GE3
Vishay Siliconix, N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC, EF
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SI7370DP-T1-GE3
Vishay Siliconix, N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount, TrenchFET®
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IRFS3306TRLPBF
Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
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AOTF296L
Alpha & Omega Semiconductor Inc., N-Channel 100V 10A (Ta), 41A (Tc) 2.2W (Ta), 36.5W (Tc) Through Hole TO-220-3F,
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SISS42DN-T1-GE3
Vishay Siliconix, N-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV
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FQP13N06L
ON Semiconductor, N-Channel 60V 13.6A (Tc) 45W (Tc) Through Hole TO-220-3, QFET®
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AOSS62934
Alpha & Omega Semiconductor Inc., N-Channel 100V 2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3, AlphaSGT™
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