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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7613-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 97.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4533pF @ 20V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSZ018NE2LSATMA1
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FDWS86068-F085
ON Semiconductor, N-Channel 100V 80A (Tc) 214W (Ta) Surface Mount 8-DFN (5.1x6.3), Automotive, AEC-Q101, PowerTrench®
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SI4800BDY-T1-E3
Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®
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DMG3406L-7
Diodes Incorporated, N-Channel 30V 3.6A (Ta) 770mW (Ta) Surface Mount SOT-23,
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DMN62D0U-7
Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,
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DMN3024LK3-13
Diodes Incorporated, N-Channel 30V 9.78A (Ta) 2.17W (Ta) Surface Mount TO-252-3,
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SIR626LDP-T1-RE3
Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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2SK2009TE85LF
Toshiba Semiconductor and Storage, N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3,
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RF4E100AJTCR
Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8,
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FDS2672
ON Semiconductor, N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
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IPS80R1K2P7AKMA1
Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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PMV20XNER
Nexperia USA Inc., N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB,
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