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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7626-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2891pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 500V 5A (Tc) 73W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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IXYS, N-Channel 250V 180A (Tc) 1390W (Tc) Through Hole PLUS247™-3, GigaMOS™
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ON Semiconductor, N-Channel 60V 7.4A (Ta), 37A (Tc) 72W (Tc) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®
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SI2302CDS-T1-GE3
Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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