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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7626-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2891pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TSM026NA03CR RLG
Taiwan Semiconductor Corporation, N-Channel 30V 168A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),
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RK7002BMHZGT116
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SST3, Automotive, AEC-Q101
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FDMS86500L
ON Semiconductor, N-Channel 60V 25A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IRFP4229PBF
Infineon Technologies, N-Channel 250V 44A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®
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TSM340N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 30A (Tc) 66W (Tc) Surface Mount TO-252, (D-Pak),
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TSM7NC60CF C0G
Taiwan Semiconductor Corporation, N-Channel 600V 7A (Tc) 44.6W (Tc) Through Hole ITO-220S,
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TK9J90E,S1E
Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N),
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DMN2004K-7
Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
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FDS6692A
ON Semiconductor, N-Channel 30V 9A (Ta) 1.47W (Ta) Surface Mount 8-SOIC, PowerTrench®
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PSMN059-150Y,115
Nexperia USA Inc., N-Channel 150V 43A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8,
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IXFK230N20T
IXYS, N-Channel 200V 230A (Tc) 1670W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™
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IRF7821TRPBF
Infineon Technologies, N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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