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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7626-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2891pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOD7S60
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Sanken, N-Channel 40V 80A (Tc) 116W (Tc) Through Hole TO-220-3,
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Diodes Incorporated, N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB,
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Nexperia USA Inc., N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
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SQS484EN-T1_GE3
Vishay Siliconix, N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
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