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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK762R6-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7130pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 60V 17A (Ta), 71A (Tc) 3.6W (Ta), 61W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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IRFH5301TRPBF
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FDS6680AS
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SI7322ADN-T1-GE3
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IRFR3910TRLPBF
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SISA14DN-T1-GE3
Vishay Siliconix, N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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APT41F100J
Microsemi Corporation, N-Channel 1000V 42A (Tc) 960W (Tc) Chassis Mount ISOTOP®,
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IPD50N10S3L16ATMA1
Infineon Technologies, N-Channel 100V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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