SIB452DK-T1-GE3
SIB452DK-T1-GE3
Part Number SIB452DK-T1-GE3
Description MOSFET N-CH 190V 1.5A SC75-6
Package / Case PowerPAK® SC-75-6L
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Lead Time To be Confirmed
Detailed Description N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
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SIB452DK-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIB452DK
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 50V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6L Single
Package / Case PowerPAK® SC-75-6L
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