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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R9-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7480pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole I2PAK,
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Toshiba Semiconductor and Storage, N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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SPB20N60C3ATMA1
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Diodes Incorporated, N-Channel 60V 210mA (Ta) 570mW (Ta) Surface Mount SOT-23-3,
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IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA),
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FDMC86240
ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
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