SISA10DN-T1-GE3
SISA10DN-T1-GE3
Part Number SISA10DN-T1-GE3 Description MOSFET N-CH 30V 30A 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SISA10DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA10DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA10DN-T1-GE3.
We are offering SISA10DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISA10DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISA10DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 15V FET Feature - Power Dissipation (Max) 3.6W (Ta), 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SISA10DN-T1-GE3 - Related ProductsMore >>
IPB037N06N3GATMA1 Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
DMN61D8L-7 Diodes Incorporated, N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23,
View
SIJ478DP-T1-GE3 Vishay Siliconix, N-Channel 80V 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
ZXMN2B03E6TA Diodes Incorporated, N-Channel 20V 4.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
DMN60H080DS-7 Diodes Incorporated, N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3,
View
BUK7Y41-80EX Nexperia USA Inc., N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
View
DMN2005LP4K-7 Diodes Incorporated, N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3,
View
DMN62D0U-13 Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,
View
STH240N10F7-6 STMicroelectronics, N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, STripFET™ F7
View
STF25N60M2-EP STMicroelectronics, N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
View
CSD17507Q5A Texas Instruments, N-Channel 30V 13A (Ta), 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
ZXMN3A01E6TA Diodes Incorporated, N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
SISA10DN-T1-GE3 - Tags
English
