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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_214
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STH140N6F7-6
STMicroelectronics, N-Channel 60V 80A (Tc) 158W (Tc) Surface Mount H2PAK-6, STripFET™
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R6007KNX
Rohm Semiconductor, N-Channel 600V 7A (Tc) 46W (Tc) Through Hole TO-220FM,
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IRFS11N50ATRRP
Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,
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BUK7628-100A,118
Nexperia USA Inc., N-Channel 100V 47A (Tc) 166W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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PSMN5R0-100PS,127
Nexperia USA Inc., N-Channel 100V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
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SI7898DP-T1-E3
Vishay Siliconix, N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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IPA60R170CFD7XKSA1
Infineon Technologies, N-Channel 650V 8A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ CFD7
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Toshiba Semiconductor and Storage, N-Channel 40V 48A (Tc) 69W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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IPP80R1K2P7XKSA1
Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
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FDBL0330N80
ON Semiconductor, N-Channel 80V 220A (Tc) 300W (Tc) Surface Mount 8-HPSOF, PowerTrench®
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BUK7610-55AL,118
Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FCP7N60
ON Semiconductor, N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-220-3, SuperFET™
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