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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R9-60E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7480pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-220AB,
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Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 81W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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Diodes Incorporated, N-Channel 60V 10.3A (Ta), 45A (Tc) 1W (Ta) Surface Mount PowerDI3333-8,
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ON Semiconductor, N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3,
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IPB60R160C6ATMA1
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FDG315N
ON Semiconductor, N-Channel 30V 2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
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CSD17577Q3A
Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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IRFB4137PBF
Infineon Technologies, N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-220, HEXFET®
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IRL60S216
Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™
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SI7852DP-T1-E3
Vishay Siliconix, N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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