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IXTP01N100D

IXTP01N100D

Part NumberIXTP01N100D

ManufacturerIXYS

DescriptionMOSFET N-CH 1KV .1A TO-220AB

DatasheetIXT(P,U,Y)01N100D

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-220AB

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IXTP01N100D - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(P,U,Y)01N100D
Standard Package	50
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	110Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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IXTP01N100D - Tags

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