SI3430DV-T1-E3
SI3430DV-T1-E3
Part Number SI3430DV-T1-E3
Description MOSFET N-CH 100V 1.8A 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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SI3430DV-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3430DV
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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