SIHJ240N60E-T1-GE3
SIHJ240N60E-T1-GE3
Part Number SIHJ240N60E-T1-GE3
Description MOSFET N-CHAN 600V PPAK SO-8L
Package / Case PowerPAK® SO-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 12A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIHJ240N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ240N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ240N60E-T1-GE3.
We are offering SIHJ240N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHJ240N60E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHJ240N60E
Standard Package 3000
Manufacturer Vishay Siliconix
Series E
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 783pF @ 100V
FET Feature -
Power Dissipation (Max) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
SIHJ240N60E-T1-GE3 - Related ProductsMore >>
FDT86246
ON Semiconductor, N-Channel 150V 2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
View
DMG6402LDM-7
Diodes Incorporated, N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26,
View
RS1E280GNTB
Rohm Semiconductor, N-Channel 30V 28A (Ta) 3W (Ta), 31W (Tc) Surface Mount 8-HSOP,
View
STP28N65M2
STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-220, MDmesh™ M2
View
DMG1012T-7
Diodes Incorporated, N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523,
View
FDG327N
ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
View
FDS6612A
ON Semiconductor, N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SUP50010E-GE3
Vishay Siliconix, N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
View
IRF7470TRPBF
Infineon Technologies, N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
BSS169H6327XTSA1
Infineon Technologies, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
VN2222LL-G
Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,
View
SIHG30N60E-E3
Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC,
View
SIHJ240N60E-T1-GE3 - Tags