IPS80R2K0P7AKMA1
IPS80R2K0P7AKMA1
Part Number IPS80R2K0P7AKMA1 Description MOSFET N-CH 800V 3A TO251-3 Package / Case TO-251-3 Stub Leads, IPakUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 3A (Tc) 24W (Tc) Through Hole PG-TO251-3
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IPS80R2K0P7AKMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPS80R2K0P7 Standard Package 1500 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V Vgs(th) (Max) @ Id 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 500V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak
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