Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7575-100A, BUK7675-100A
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 25V
FET Feature -
Power Dissipation (Max) 99W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak),
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Diodes Incorporated, N-Channel 60V 1A (Ta) 2W (Ta) Surface Mount SOT-223,
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STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
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Nexperia USA Inc., N-Channel 25V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8,
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Vishay Siliconix, N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
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STMicroelectronics, N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247, MDmesh™ II
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Toshiba Semiconductor and Storage, N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H
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Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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Rohm Semiconductor, N-Channel 250V 51A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,
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BSC093N04LSGATMA1
Infineon Technologies, N-Channel 40V 13A (Ta), 49A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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