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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R1-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFB20N50KPBF
Vishay Siliconix, N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-220AB,
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BUK764R0-40E,118
Nexperia USA Inc., N-Channel 40V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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RFD14N05L
ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Through Hole I-PAK,
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IRFB4610PBF
Infineon Technologies, N-Channel 100V 73A (Tc) 190W (Tc) Through Hole TO-220AB, HEXFET®
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BSC0902NSIATMA1
Infineon Technologies, N-Channel 30V 23A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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BSC014N06NSTATMA1
Infineon Technologies, N-Channel 60V 100A (Tc) 3W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™
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IRFR320TRPBF
Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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BSZ0902NSIATMA1
Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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SSM3K15F,LF
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount S-Mini, π-MOSIV
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IRFR420ATRPBF
Vishay Siliconix, N-Channel 500V 3.3A (Tc) 83W (Tc) Surface Mount D-Pak,
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2N7002 TR
Central Semiconductor Corp, N-Channel 60V 115mA (Tc) 350mW (Ta) Surface Mount SOT-23,
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STD45NF75T4
STMicroelectronics, N-Channel 75V 40A (Tc) 125W (Tc) Surface Mount DPAK, STripFET™ II
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