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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STP3NK50Z
STMicroelectronics, N-Channel 500V 2.3A (Tc) 45W (Tc) Through Hole TO-220AB, SuperMESH™
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IPB067N08N3GATMA1
Infineon Technologies, N-Channel 80V 80A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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IXTH02N250
IXYS, N-Channel 2500V 200mA (Tc) 83W (Tc) Through Hole TO-247 (IXTH),
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IRFBF20LPBF
Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK,
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NTD4808N-1G
ON Semiconductor, N-Channel 30V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole I-PAK,
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R6006ANX
Rohm Semiconductor, N-Channel 600V 6A (Tc) 40W (Tc) Through Hole TO-220FM,
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BUK9Y59-60E,115
Nexperia USA Inc., N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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SSM3K341R,LF
Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
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STF7NM80
STMicroelectronics, N-Channel 800V 6.5A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™
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SIRC16DP-T1-GE3
Vishay Siliconix, N-Channel 25V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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IXFH40N30
IXYS, N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
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STF4LN80K5
STMicroelectronics, N-Channel 800V 3A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ K5
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