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SIRC16DP-T1-GE3

SIRC16DP-T1-GE3

Part NumberSIRC16DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAKSO-8

DatasheetSIRC16DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8

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SIRC16DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC16DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.96mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5150pF @ 10V
FET Feature	-
Power Dissipation (Max)	54.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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