IRFBA90N20DPBF

Part NumberIRFBA90N20DPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFBA90N20DPbF
Standard Package	50
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6080pF @ 25V
FET Feature	-
Power Dissipation (Max)	650W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	SUPER-220™ (TO-273AA)
Package / Case	Super-220™-3 (Straight Leads)

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