Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8812DB-T2-E1

SI8812DB-T2-E1

SI8812DB-T2-E1

Part NumberSI8812DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V MICROFOOT

DatasheetSi8812DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8812DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8812DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8812DB-T2-E1.
We are offering SI8812DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8812DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8812DB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

SI8812DB-T2-E1 - Related Products

	AOTF15S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 15A (Tc) 27.8W (Tc) Through Hole TO-220-3F, aMOS™	View
	PMV40UN2R	Nexperia USA Inc., N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB,	View
	BSH108,215	Nexperia USA Inc., N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
	CSD19533KCS	Texas Instruments, N-Channel 100V 100A (Ta) 188W (Tc) Through Hole TO-220-3, NexFET™	View
	STL19N65M5	STMicroelectronics, N-Channel 650V 2.3A (Ta), 12.5A (Tc) 2.8W (Ta), 90W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V	View
	TSM70N900CI C0G	Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Through Hole ITO-220AB,	View
	R6020KNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 231W (Tc) Surface Mount TO-263,	View
	SISH472DN-T1-GE3	Vishay Siliconix, N-Channel 30V 15A (Ta), 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	DMN6040SVT-7	Diodes Incorporated, N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	IPD70R360P7SAUMA1	Infineon Technologies, N-Channel 700V 12.5A (Tc) 59.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	TPH1R204PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	IPN80R4K5P7ATMA1	Infineon Technologies, N-Channel 800V 1.5A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View

SI8812DB-T2-E1 - Tags

SI8812DB-T2-E1 SI8812DB-T2-E1 PDF SI8812DB-T2-E1 datasheet SI8812DB-T2-E1 specification SI8812DB-T2-E1 image SI8812DB-T2-E1 India Renesas Electronics India SI8812DB-T2-E1 buy SI8812DB-T2-E1 SI8812DB-T2-E1 price SI8812DB-T2-E1 distributor SI8812DB-T2-E1 supplier SI8812DB-T2-E1 wholesales