SQM60030E_GE3
SQM60030E_GE3
Part Number SQM60030E_GE3
Description MOSFET N-CH 80V 120A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
To learn about the specification of SQM60030E_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQM60030E_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQM60030E_GE3.
We are offering SQM60030E_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQM60030E_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD40030E
Standard Package 800
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQM60030E_GE3 - Related ProductsMore >>
BSP297H6327XTSA1
Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
SIS454DN-T1-GE3
Vishay Siliconix, N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
CPH6445-TL-W
ON Semiconductor, N-Channel 60V 3.5A (Ta) 1.6W (Ta) Surface Mount 6-CPH,
View
SIHP20N50E-GE3
Vishay Siliconix, N-Channel 500V 19A (Tc) 179W (Tc) Through Hole TO-220AB,
View
SSM3K357R,LF
Toshiba Semiconductor and Storage, N-Channel 60V 650mA (Ta) 1W (Ta) Surface Mount SOT-23F, π-MOSV
View
PSMN1R6-30BL,118
Nexperia USA Inc., N-Channel 30V 100A (Tc) 306W (Tc) Surface Mount D2PAK,
View
STP24NM60N
STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-220, MDmesh™ II
View
IRLML0100TRPBF
Infineon Technologies, N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
FDP52N20
ON Semiconductor, N-Channel 200V 52A (Tc) 357W (Tc) Through Hole TO-220-3, UniFET™
View
SIHB23N60E-GE3
Vishay Siliconix, N-Channel 600V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263),
View
SIHA20N50E-E3
Vishay Siliconix, N-Channel 500V 19A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,
View
IPD60R360P7SAUMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
SQM60030E_GE3 - Tags