Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892DN-T1-GE3

SIS892DN-T1-GE3

SIS892DN-T1-GE3

Part NumberSIS892DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8 PPAK

DatasheetSIS892DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892DN-T1-GE3.
We are offering SIS892DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS892DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	611pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892DN-T1-GE3 - Related Products

	RJK0354DSP-00#J0	Renesas Electronics America, N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	SI8466EDB-T2-E1	Vishay Siliconix, N-Channel 8V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	BSC057N08NS3GATMA1	Infineon Technologies, N-Channel 80V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	IPP072N10N3GXKSA1	Infineon Technologies, N-Channel 100V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	IXTA80N075L2	IXYS, N-Channel 75V 80A (Tc) 357W (Tc) Surface Mount TO-263AA, Linear L2™	View
	FDP150N10	ON Semiconductor, N-Channel 100V 57A (Tc) 110W (Tc) Through Hole TO-220-3, PowerTrench®	View
	IPN60R600P7SATMA1	Infineon Technologies, N-Channel 600V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	IRL640STRLPBF	Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	FK4B01100L1	Panasonic Electronic Components, N-Channel 12V 3.4A (Ta) 360mW (Ta) Surface Mount XLGA004-W-0808-RA01,	View
	NTGS3446T1G	ON Semiconductor, N-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 6-TSOP,	View
	FDD2572	ON Semiconductor, N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	TK55S10N1,LQ	Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View

SIS892DN-T1-GE3 - Tags

SIS892DN-T1-GE3 SIS892DN-T1-GE3 PDF SIS892DN-T1-GE3 datasheet SIS892DN-T1-GE3 specification SIS892DN-T1-GE3 image SIS892DN-T1-GE3 India Renesas Electronics India SIS892DN-T1-GE3 buy SIS892DN-T1-GE3 SIS892DN-T1-GE3 price SIS892DN-T1-GE3 distributor SIS892DN-T1-GE3 supplier SIS892DN-T1-GE3 wholesales