Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892DN-T1-GE3

SIS892DN-T1-GE3

SIS892DN-T1-GE3

Part NumberSIS892DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8 PPAK

DatasheetSIS892DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892DN-T1-GE3.
We are offering SIS892DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS892DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	611pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892DN-T1-GE3 - Related Products

	TSM220NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),	View
	STB13N80K5	STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH5™	View
	TK65G10N1,RQ	Toshiba Semiconductor and Storage, N-Channel 100V 65A (Ta) 156W (Tc) Surface Mount D2PAK, U-MOSVIII-H	View
	FDMS1D5N03	ON Semiconductor, N-Channel 30V 218A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	IXFN52N100X	IXYS, N-Channel 1000V 44A (Tc) 830W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	SIA436DJ-T1-GE3	Vishay Siliconix, N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	TSM230N06PQ56 RLG	Taiwan Semiconductor Corporation, N-Channel 60V 44A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	STB10N95K5	STMicroelectronics, N-Channel 950V 8A (Tc) 130W (Tc) Surface Mount D2PAK, SuperMESH5™	View
	STB33N65M2	STMicroelectronics, N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	STL13N60M6	STMicroelectronics, N-Channel 600V 7A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M6	View
	SSM3K62TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 1W (Ta) Surface Mount UFM, U-MOSVII-H	View
	RK7002BMT116	Rohm Semiconductor, N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount SST3,	View

SIS892DN-T1-GE3 - Tags

SIS892DN-T1-GE3 SIS892DN-T1-GE3 PDF SIS892DN-T1-GE3 datasheet SIS892DN-T1-GE3 specification SIS892DN-T1-GE3 image SIS892DN-T1-GE3 India Renesas Electronics India SIS892DN-T1-GE3 buy SIS892DN-T1-GE3 SIS892DN-T1-GE3 price SIS892DN-T1-GE3 distributor SIS892DN-T1-GE3 supplier SIS892DN-T1-GE3 wholesales