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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R3-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 43.1nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLR8256TRPBF
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TK34E10N1,S1X
Toshiba Semiconductor and Storage, N-Channel 100V 75A (Tc) 103W (Tc) Through Hole TO-220, U-MOSVIII-H
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PSMN034-100PS,127
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Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
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Diodes Incorporated, N-Channel 100V 98A (Tc) 2W (Ta), 139W (Tc) Through Hole TO-220AB,
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FQPF6N90C
ON Semiconductor, N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-220F, QFET®
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CSD13380F3
Texas Instruments, N-Channel 12V 3.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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