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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9606-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 11693pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF510PBF
Vishay Siliconix, N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB,
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IXFP5N50P3
IXYS, N-Channel 500V 5A (Tc) 114W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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NTD24N06LT4G
ON Semiconductor, N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK,
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FDB2710
ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®
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R8008ANJFRGTL
Rohm Semiconductor, N-Channel 800V 8A (Tc) 195W (Tc) Surface Mount LPTS, Automotive, AEC-Q101
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IRF530NSTRLPBF
Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 70W (Tc) Surface Mount D2PAK, HEXFET®
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BUK9Y29-40E,115
Nexperia USA Inc., N-Channel 40V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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IRL530PBF
Vishay Siliconix, N-Channel 100V 15A (Tc) 88W (Tc) Through Hole TO-220AB,
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IPB044N15N5ATMA1
Infineon Technologies, N-Channel 150V 174A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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IPT60R028G7XTMA1
Infineon Technologies, N-Channel 600V 75A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7
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SIRA84DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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PSMN040-100MSEX
Nexperia USA Inc., N-Channel 100V 30A (Tj) 91W (Tc) Surface Mount LFPAK33,
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