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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9606-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 11693pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Rohm Semiconductor, N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,
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TK65E10N1,S1X
Toshiba Semiconductor and Storage, N-Channel 100V 148A (Ta) 192W (Tc) Through Hole TO-220, U-MOSVIII-H
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Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
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