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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9608-55A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 6021pF @ 25V
FET Feature -
Power Dissipation (Max) 253W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN7R0-30YLC,115
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STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6
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Nexperia USA Inc., N-Channel 40V 100A (Tc) 234W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™
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Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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