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SI2312BDS-T1-E3


SI2312BDS-T1-E3

Part NumberSI2312BDS-T1-E3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI2312BDS-T1-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±8V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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SI2312BDS-T1-E3 - Tags

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