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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9612-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3693pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFR310TRPBF
Vishay Siliconix, N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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TSM2318CX RFG
Taiwan Semiconductor Corporation, N-Channel 40V 3.9A (Ta) 1.25W (Ta) Surface Mount SOT-23,
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SUG90090E-GE3
Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
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RSR025N03TL
Rohm Semiconductor, N-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,
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IPD053N06NATMA1
Infineon Technologies, N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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STF12N60M2
STMicroelectronics, N-Channel 600V 9A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
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SI4838BDY-T1-GE3
Vishay Siliconix, N-Channel 12V 34A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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FQPF9N25C
ON Semiconductor, N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F, QFET®
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STH185N10F3-6
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F3
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IPP60R299CPXKSA1
Infineon Technologies, N-Channel 650V 11A (Tc) 96W (Tc) Through Hole PG-TO220-3, CoolMOS™
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CSD18502Q5B
Texas Instruments, N-Channel 40V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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RU1C001UNTCL
Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,
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