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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9612-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3693pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD18536KCS
Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™
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DMN65D8LQ-7
Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,
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IRFH8316TRPBF
Infineon Technologies, N-Channel 30V 27A (Ta), 50A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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FDBL9403L-F085
ON Semiconductor, N-Channel 40V 53.3A (Tc) 3.5W (Tc) Surface Mount 8-HPSOF, Automotive, AEC-Q101
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BUK969R0-60E,118
Nexperia USA Inc., N-Channel 60V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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SIR606BDP-T1-RE3
Vishay Siliconix, N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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STH145N8F7-2AG
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SQJ444EP-T1_GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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IRLML0060TRPBF
Infineon Technologies, N-Channel 60V 2.7A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
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NTMFS5C426NT1G
ON Semiconductor, N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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