IPP60R299CPXKSA1
IPP60R299CPXKSA1
Part Number IPP60R299CPXKSA1 Description MOSFET N-CH 650V 11A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 11A (Tc) 96W (Tc) Through Hole PG-TO220-3
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IPP60R299CPXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPP60R299CP Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3
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