Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD3N50D-GE3

SIHD3N50D-GE3

SIHD3N50D-GE3

Part NumberSIHD3N50D-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 3A TO252 DPAK

DatasheetSIHD3N50D

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA

To learn about the specification of SIHD3N50D-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD3N50D-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD3N50D-GE3.
We are offering SIHD3N50D-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD3N50D-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD3N50D
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 100V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD3N50D-GE3 - Related Products

	TSM4436CS RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	IPA50R250CPXKSA1	Infineon Technologies, N-Channel 500V 13A (Tc) 33W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	CSD19533KCS	Texas Instruments, N-Channel 100V 100A (Ta) 188W (Tc) Through Hole TO-220-3, NexFET™	View
	PMZB290UNE2YL	Nexperia USA Inc., N-Channel 20V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3,	View
	BUK9Y3R0-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FDD8876	ON Semiconductor, N-Channel 30V 15A (Ta), 73A (Tc) 70W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	FDA20N50-F109	ON Semiconductor, N-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-3PN, UniFET™	View
	IRFS38N20DTRLP	Infineon Technologies, N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	DN2540N5-G	Microchip Technology, N-Channel 400V 500mA (Tj) 15W (Tc) Through Hole TO-220-3,	View
	SQJA46EP-T1_GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	PSMN2R5-60PLQ	Nexperia USA Inc., N-Channel 60V 150A (Tc) 349W (Tc) Through Hole TO-220AB,	View
	IRFB4615PBF	Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®	View

SIHD3N50D-GE3 - Tags

SIHD3N50D-GE3 SIHD3N50D-GE3 PDF SIHD3N50D-GE3 datasheet SIHD3N50D-GE3 specification SIHD3N50D-GE3 image SIHD3N50D-GE3 India Renesas Electronics India SIHD3N50D-GE3 buy SIHD3N50D-GE3 SIHD3N50D-GE3 price SIHD3N50D-GE3 distributor SIHD3N50D-GE3 supplier SIHD3N50D-GE3 wholesales