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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9616-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4034pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DMG2302U-7
Diodes Incorporated, N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3,
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STB80NF10T4
STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
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ZXMN3B14FTA
Diodes Incorporated, N-Channel 30V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3,
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IRFB7430PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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FQP17N40
ON Semiconductor, N-Channel 400V 16A (Tc) 170W (Tc) Through Hole TO-220-3, QFET®
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PSMN1R2-25YL,115
Nexperia USA Inc., N-Channel 25V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
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SIHP22N60E-E3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB,
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DMT6007LFG-7
Diodes Incorporated, N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8,
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IPN50R800CEATMA1
Infineon Technologies, N-Channel 500V 7.6A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
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FDP3682
ON Semiconductor, N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Through Hole TO-220-3, PowerTrench®
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TPHR8504PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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DMN60H080DS-7
Diodes Incorporated, N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3,
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