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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9616-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4034pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIR158DP-T1-RE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen III
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FQP5N60C
ON Semiconductor, N-Channel 600V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®
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SIRA20DP-T1-RE3
Vishay Siliconix, N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STW45N60DM6
STMicroelectronics, N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-247, MDmesh™ DM6
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CSD17578Q3AT
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IRFU220NPBF
Infineon Technologies, N-Channel 200V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251), HEXFET®
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DMN6069SE-13
Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
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BSC160N10NS3GATMA1
Infineon Technologies, N-Channel 100V 8.8A (Ta), 42A (Tc) 60W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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SI4156DY-T1-GE3
Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
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IXFN48N50
IXYS, N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™
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IRLML0040TRPBF
Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
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STF2N80K5
STMicroelectronics, N-Channel 800V 2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH5™
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