FQT7N10TF
FQT7N10TF
Part Number FQT7N10TF
Description MOSFET N-CH 100V 1.7A SOT-223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
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FQT7N10TF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQT7N10
Standard Package 1
Manufacturer ON Semiconductor
Series QFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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