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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK961R6-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 16400pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD19502Q5B
Texas Instruments, N-Channel 80V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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Nexperia USA Inc., N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
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FDS3692
ON Semiconductor, N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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SQ2348ES-T1_GE3
Vishay Siliconix, N-Channel 30V 8A (Tc) 3W (Tc) Surface Mount TO-236, TrenchFET®
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IXYS, N-Channel 300V 150A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™
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ON Semiconductor, N-Channel 60V 109A (Tc) 114W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101
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PMV30UN2R
Nexperia USA Inc., N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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FDB3632
ON Semiconductor, N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK, PowerTrench®
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STMicroelectronics, N-Channel 900V 7A (Tc) 110W (Tc) Through Hole TO-247-3, MDmesh™ K5
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Rohm Semiconductor, N-Channel 600V 12A (Tc) 160W (Tc) Surface Mount LPTS (D2PAK),
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SISH110DN-T1-GE3
Vishay Siliconix, N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen II
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IRLS3034TRL7PP
Infineon Technologies, N-Channel 40V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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