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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_430A
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQP120N06-3M5L_GE3
Vishay Siliconix, N-Channel 60V 120A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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STB28N60DM2
STMicroelectronics, N-Channel 600V 21A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ DM2
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CSD18563Q5AT
Texas Instruments, N-Channel 60V 100A (Ta) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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IRFR9N20DTRPBF
Infineon Technologies, N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak, HEXFET®
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FDS2672
ON Semiconductor, N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
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IXFH36N50P
IXYS, N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarP2™
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SI4488DY-T1-GE3
Vishay Siliconix, N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
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IPP60R099C6XKSA1
Infineon Technologies, N-Channel 600V 37.9A (Tc) 278W (Tc) Through Hole PG-TO220-3, CoolMOS™
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STD2NK100Z
STMicroelectronics, N-Channel 1000V 1.85A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™
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STW34NM60ND
STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-247, FDmesh™ II
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IXFH34N65X2
IXYS, N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247, HiPerFET™
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TK13A60D(STA4,Q,M)
Toshiba Semiconductor and Storage, N-Channel 600V 13A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVII
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