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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_430A
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN62D0LFB-7
Diodes Incorporated, N-Channel 60V 100mA (Ta) 470mW (Ta) Surface Mount 3-X1DFN1006,
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STH140N6F7-2
STMicroelectronics, N-Channel 60V 80A (Tc) 158W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
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CSD17581Q3A
Texas Instruments, N-Channel 30V 21A (Ta) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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2N7000-G
Microchip Technology, N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3,
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RD3L080SNFRATL
Rohm Semiconductor, N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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BUK9Y104-100B,115
Nexperia USA Inc., N-Channel 100V 14.8A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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NTMFS4897NFT1G
ON Semiconductor, N-Channel 30V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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IPB60R360P7ATMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
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SI3430DV-T1-E3
Vishay Siliconix, N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP,
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BSZ042N06NSATMA1
Infineon Technologies, N-Channel 60V 17A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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IRF840STRLPBF
Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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SIHG11N80E-GE3
Vishay Siliconix, N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-247AC,
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