Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FDB13AN06A0

FDB13AN06A0

FDB13AN06A0

Part NumberFDB13AN06A0

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 62A TO-263AB

DatasheetFDB13AN06A0

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK

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FDB13AN06A0 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB13AN06A0
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	10.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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