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IPP65R125C7XKSA1

IPP65R125C7XKSA1

Part NumberIPP65R125C7XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 18A TO220

DatasheetIPP65R125C7

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3

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IPP65R125C7XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPP65R125C7
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™ C7
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id	4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 400V
FET Feature	-
Power Dissipation (Max)	101W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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