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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9620-100B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 53.4nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5657pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDMT800100DC
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Diodes Incorporated, N-Channel 30V 9.5A (Ta) 1W (Ta) Surface Mount PowerDI3333-8, Automotive, AEC-Q101
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RUM001L02T2CL
Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,
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IRFP360PBF
Vishay Siliconix, N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-247-3,
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IRFB4615PBF
Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®
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IRFR024NTRPBF
Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
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STU6N60M2
STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ II Plus
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TK39N60X,S1F
Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV-H
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IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP2™
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BUK7610-100B,118
Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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STH315N10F7-2
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
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AO7400
Alpha & Omega Semiconductor Inc., N-Channel 30V 1.7A (Ta) 350mW (Ta) Surface Mount SC-70-3,
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