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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK963R3-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 13490pF @ 25V
FET Feature -
Power Dissipation (Max) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CSD17527Q5A
Texas Instruments, N-Channel 30V 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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FDS3580
ON Semiconductor, N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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IPB60R360P7ATMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
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TSM80N400CF C0G
Taiwan Semiconductor Corporation, N-Channel 800V 12A (Tc) 69W (Tc) Through Hole ITO-220S,
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BUK662R4-40C,118
Nexperia USA Inc., N-Channel 40V 120A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FQP85N06
ON Semiconductor, N-Channel 60V 85A (Tc) 160W (Tc) Through Hole TO-220-3, QFET®
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TK33S10N1Z,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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IRL1404ZSTRLPBF
Infineon Technologies, N-Channel 40V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
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SQJA62EP-T1_GE3
Vishay Siliconix, N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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TN2524N8-G
Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
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IRFD224PBF
Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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IRFR320TRLPBF
Vishay Siliconix, N-Channel 400V 3.1A (Tc) 42W (Tc) Surface Mount D-Pak,
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