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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK963R3-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 13490pF @ 25V
FET Feature -
Power Dissipation (Max) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF614SPBF
Vishay Siliconix, N-Channel 250V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D2PAK,
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IRL630STRLPBF
Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,
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NVS4409NT1G
ON Semiconductor, N-Channel 25V 700mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),
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R6011ENJTL
Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
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STD7N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK, SuperMESH5™
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SIRA26DP-T1-RE3
Vishay Siliconix, N-Channel 25V 60A (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SSM3K15AFU,LF
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSIII
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STD60NF55LAT4
STMicroelectronics, N-Channel 55V 60A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, SuperFET® II
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PMZB290UNE,315
Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,
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IPP70N04S406AKSA1
Infineon Technologies, N-Channel 40V 70A (Tc) 58W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
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DMN2300U-7
Diodes Incorporated, N-Channel 20V 1.24A (Ta) 430mW (Ta) Surface Mount SOT-23,
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RUL035N02FRATR
Rohm Semiconductor, N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6, Automotive, AEC-Q101
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