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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R2-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 123nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17130pF @ 25V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI7738DP-T1-E3
Vishay Siliconix, N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SIHP100N60E-GE3
Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220AB,
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BUK9Y25-60E,115
Nexperia USA Inc., N-Channel 60V 34A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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VN2460N3-G
Microchip Technology, N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-92-3,
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IRF644STRRPBF
Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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IRFIBC40GPBF
Vishay Siliconix, N-Channel 600V 3.5A (Tc) 40W (Tc) Through Hole TO-220-3,
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NTR5198NLT1G
ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
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RF6E045AJTCR
Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1W (Tc) Surface Mount TUMT6,
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IPD50R3K0CEAUMA1
Infineon Technologies, N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CE
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DMN10H220L-7
Diodes Incorporated, N-Channel 100V 1.4A (Ta) 1.3W (Ta) Surface Mount SOT-23,
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STH240N10F7-6
STMicroelectronics, N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, STripFET™ F7
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DMT3004LPS-13
Diodes Incorporated, N-Channel 30V 21A (Ta), 140A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount PowerDI5060-8,
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