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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R2-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 123nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17130pF @ 25V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 100V 8A (Ta), 35A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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ON Semiconductor, N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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Infineon Technologies, N-Channel 650V 24A (Tc) 156W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ C7
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