Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN7R506NH,L1Q

TPN7R506NH,L1Q

TPN7R506NH,L1Q

Part NumberTPN7R506NH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 60V 26A 8TSON

DatasheetTPN7R506NH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN7R506NH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN7R506NH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN7R506NH,L1Q.
We are offering TPN7R506NH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN7R506NH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN7R506NH
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 30V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN7R506NH,L1Q - Related Products

	NTTFS4C02NTAG	ON Semiconductor, N-Channel 30V 170A (Tc) 91W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	BUK7Y72-80EX	Nexperia USA Inc., N-Channel 80V 16A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	CSD18503Q5AT	Texas Instruments, N-Channel 40V 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	RTR025N03TL	Rohm Semiconductor, N-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	PSMN7R5-60YLX	Nexperia USA Inc., N-Channel 60V 86A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SIRA96DP-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	PSMN2R2-25YLC,115	Nexperia USA Inc., N-Channel 25V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	R5011FNJTL	Rohm Semiconductor, N-Channel 500V 11A (Tc) 50W (Tc) Surface Mount LPTS,	View
	CSD16340Q3T	Texas Instruments, N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	SI4056DY-T1-GE3	Vishay Siliconix, N-Channel 100V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IPB019N06L3GATMA1	Infineon Technologies, N-Channel 60V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	CSD19532KTTT	Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View

TPN7R506NH,L1Q - Tags

TPN7R506NH,L1Q TPN7R506NH,L1Q PDF TPN7R506NH,L1Q datasheet TPN7R506NH,L1Q specification TPN7R506NH,L1Q image TPN7R506NH,L1Q India Renesas Electronics India TPN7R506NH,L1Q buy TPN7R506NH,L1Q TPN7R506NH,L1Q price TPN7R506NH,L1Q distributor TPN7R506NH,L1Q supplier TPN7R506NH,L1Q wholesales