SIRA24DP-T1-GE3
SIRA24DP-T1-GE3
Part Number SIRA24DP-T1-GE3 Description MOSFET N-CH 25V 60A POWERPAKSO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIRA24DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA24DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA24DP-T1-GE3.
We are offering SIRA24DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIRA24DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIRA24DP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIRA24DP-T1-GE3 - Related ProductsMore >>
TK42A12N1,S4X Toshiba Semiconductor and Storage, N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
STB24N65M2 STMicroelectronics, N-Channel 650V 16A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ M2
View
IXTH21N50 IXYS, N-Channel 500V 21A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), MegaMOS™
View
RTR025N05TL Rohm Semiconductor, N-Channel 45V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,
View
CPC5603CTR IXYS Integrated Circuits Division, N-Channel 415V 5mA (Ta) 2.5W (Ta) Surface Mount SOT-223,
View
TN0106N3-G Microchip Technology, N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
SIHF12N50C-E3 Vishay Siliconix, N-Channel 500V 12A (Tc) 36W (Tc) Through Hole TO-220 Full Pack,
View
PSMN3R4-30BL,118 Nexperia USA Inc., N-Channel 30V 100A (Tc) 114W (Tc) Surface Mount D2PAK,
View
STF33N60DM2 STMicroelectronics, N-Channel 650V 24A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ DM2
View
QS5U36TR Rohm Semiconductor, N-Channel 20V 2.5A (Ta) 1.25W (Ta) Surface Mount TSMT5,
View
FCB290N80 ON Semiconductor, N-Channel 800V 17A (Tc) 212W (Tc) Surface Mount D²PAK, SuperFET® II
View
MMBF0201NLT1G ON Semiconductor, N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SIRA24DP-T1-GE3 - Tags
English
