SI8466EDB-T2-E1

Part NumberSI8466EDB-T2-E1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8466EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	43mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 4V
FET Feature	-
Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA, WLCSP

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