SI8466EDB-T2-E1
SI8466EDB-T2-E1
Part Number SI8466EDB-T2-E1 Description MOSFET N-CH 8V 3.6A MICROFOOT Package / Case 4-UFBGA, WLCSPUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 8V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
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SI8466EDB-T2-E1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8466EDB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 43mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 4V FET Feature - Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-UFBGA, WLCSP
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