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APT34N80B2C3G

APT34N80B2C3G

Part NumberAPT34N80B2C3G

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 800V 34A T-MAX

DatasheetAPT34N80(B2,L)C3

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]

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APT34N80B2C3G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	APT34N80(B2,L)C3
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant

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