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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB3206PbF, IRFS(L)3206PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTB60N06T4G
ON Semiconductor, N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D2PAK,
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PMXB56ENZ
Nexperia USA Inc., N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,
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CSD19533Q5A
Texas Instruments, N-Channel 100V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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2N7002
ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23 (TO-236AB),
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ZVN2110ASTZ
Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
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BS170-D75Z
ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,
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IRLR3636TRPBF
Infineon Technologies, N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®
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BSC900N20NS3GATMA1
Infineon Technologies, N-Channel 200V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8, OptiMOS™
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BUK7Y4R4-40EX
Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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STI270N4F3
STMicroelectronics, N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, STripFET™ III
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STB13NK60ZT4
STMicroelectronics, N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK, SuperMESH™
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ZXMN2A02N8TA
Diodes Incorporated, N-Channel 20V 8.3A (Ta) 1.56W (Ta) Surface Mount 8-SO,
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