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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR7807ZPbF, IRLU7807ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FQT4N20LTF
ON Semiconductor, N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4, QFET®
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IXTP1R6N50D2
IXYS, N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB,
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STW70N60M2
STMicroelectronics, N-Channel 600V 68A (Tc) 450W (Tc) Through Hole TO-247, MDmesh™ II Plus
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IRFR224PBF
Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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IRFU310PBF
Vishay Siliconix, N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
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STL7N6F7
STMicroelectronics, N-Channel 60V 7A (Tc) 2.4W (Ta) Surface Mount PowerFlat™ (2x2), STripFET™
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TK25N60X,S1F
Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-247, DTMOSIV-H
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SUP60030E-GE3
Vishay Siliconix, N-Channel 80V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
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BSZ0902NSATMA1
Infineon Technologies, N-Channel 30V 19A (Ta), 40A (Tc) 2.1W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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IPB108N15N3GATMA1
Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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ZXMN6A25KTC
Diodes Incorporated, N-Channel 60V 7A (Ta) 2.11W (Ta) Surface Mount TO-252-3,
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TSM900N10CH X0G
Taiwan Semiconductor Corporation, N-Channel 100V 15A (Tc) 50W (Tc) Through Hole TO-251 (IPAK),
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