FDP8860
FDP8860
Part Number FDP8860 Description MOSFET N-CH 30V 80A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 80A (Tc) 254W (Tc) Through Hole TO-220-3
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FDP8860 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDP8860 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12240pF @ 15V FET Feature - Power Dissipation (Max) 254W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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TSM60N900CI C0G Taiwan Semiconductor Corporation, N-Channel 600V 4.5A (Tc) 50W (Tc) Through Hole ITO-220AB,
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PSMN010-80YLX Nexperia USA Inc., N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8,
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SI4894BDY-T1-E3 Vishay Siliconix, N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SO, TrenchFET®
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CMPDM7003 TR Central Semiconductor Corp, N-Channel 50V 280mA (Ta) 350mW (Ta) Surface Mount SOT-23,
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TN5325K1-G Microchip Technology, N-Channel 250V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23),
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IPD60R600C6ATMA1 Infineon Technologies, N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
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