Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

Part NumberSQJQ466E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 200A POWERPAK8

DatasheetSQJQ466E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ466E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ466E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ466E-T1_GE3.
We are offering SQJQ466E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ466E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ466E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10210pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ466E-T1_GE3 - Related Products

	RS1E170GNTB	Rohm Semiconductor, N-Channel 30V 17A (Ta) 3W (Ta), 23.7W (Tc) Surface Mount 8-HSOP,	View
	NTTFS4985NFTAG	ON Semiconductor, N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	NX138BKR	Nexperia USA Inc., N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB,	View
	BSC123N10LSGATMA1	Infineon Technologies, N-Channel 100V 10.6A (Ta), 71A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SISA72ADN-T1-GE3	Vishay Siliconix, N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	STN3NF06	STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	1HN04CH-TL-W	ON Semiconductor, N-Channel 100V 270mA (Ta) Surface Mount 3-CPH,	View
	CSD18504Q5AT	Texas Instruments, N-Channel 40V 50A (Ta) 3.1W (Ta), 77W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	BUK961R6-40E,118	Nexperia USA Inc., N-Channel 40V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	DMTH4004SCTB-13	Diodes Incorporated, N-Channel 40V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB,	View
	IRLR2905TRPBF	Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	MCB130N10Y-TP	Micro Commercial Co, N-Channel 100V 130A (Tc) 192W (Tc) Surface Mount D2PAK,	View

SQJQ466E-T1_GE3 - Tags

SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 PDF SQJQ466E-T1_GE3 datasheet SQJQ466E-T1_GE3 specification SQJQ466E-T1_GE3 image SQJQ466E-T1_GE3 India Renesas Electronics India SQJQ466E-T1_GE3 buy SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 price SQJQ466E-T1_GE3 distributor SQJQ466E-T1_GE3 supplier SQJQ466E-T1_GE3 wholesales