SQJQ466E-T1_GE3
SQJQ466E-T1_GE3
Part Number SQJQ466E-T1_GE3 Description MOSFET N-CH 60V 200A POWERPAK8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
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SQJQ466E-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQJQ466E Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10210pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 8 x 8 Package / Case 8-PowerTDFN
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