SIE822DF-T1-GE3

Part NumberSIE822DF-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE822DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (S)
Package / Case	10-PolarPAK® (S)

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STB16N90K5	STMicroelectronics, N-Channel 900V 15A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ K5	View
BUK9207-30B,118	Nexperia USA Inc., N-Channel 30V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
STF10N65K3	STMicroelectronics, N-Channel 650V 10A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH3™	View