Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE822DF-T1-GE3

SIE822DF-T1-GE3

SIE822DF-T1-GE3

Part NumberSIE822DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 50A POLARPAK

DatasheetSIE822DF

Package / Case10-PolarPAK® (S)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

To learn about the specification of SIE822DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE822DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE822DF-T1-GE3.
We are offering SIE822DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE822DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE822DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (S)
Package / Case	10-PolarPAK® (S)

SIE822DF-T1-GE3 - Related Products

	SQJA88EP-T1_GE3	Vishay Siliconix, N-Channel 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	DMN2005UPS-13	Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8,	View
	PSMN7R0-30MLC,115	Nexperia USA Inc., N-Channel 30V 67A (Tc) 57W (Tc) Surface Mount LFPAK33,	View
	SIHG21N65EF-GE3	Vishay Siliconix, N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC,	View
	IXFN230N20T	IXYS, N-Channel 200V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B, GigaMOS™	View
	SIS108DN-T1-GE3	Vishay Siliconix, N-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	QS5U17TR	Rohm Semiconductor, N-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount TSMT5,	View
	SI7172DP-T1-GE3	Vishay Siliconix, N-Channel 200V 25A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	HTNFET-T	Honeywell Aerospace, N-Channel 55V 50W (Tj) Through Hole 4-Power Tab, HTMOS™	View
	SI7120ADN-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BUK9Y41-80E,115	Nexperia USA Inc., N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	FQU13N10LTU	ON Semiconductor, N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Through Hole I-PAK, QFET®	View

SIE822DF-T1-GE3 - Tags

SIE822DF-T1-GE3 SIE822DF-T1-GE3 PDF SIE822DF-T1-GE3 datasheet SIE822DF-T1-GE3 specification SIE822DF-T1-GE3 image SIE822DF-T1-GE3 India Renesas Electronics India SIE822DF-T1-GE3 buy SIE822DF-T1-GE3 SIE822DF-T1-GE3 price SIE822DF-T1-GE3 distributor SIE822DF-T1-GE3 supplier SIE822DF-T1-GE3 wholesales