IPDD60R125G7XTMA1
IPDD60R125G7XTMA1
Part Number IPDD60R125G7XTMA1 Description MOSFET NCH 650V 54A PG-HDSOP-10 Package / Case 10-PowerSOP ModuleUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1
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IPDD60R125G7XTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPDD60R125G7 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ G7 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 4V @ 320µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 400V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HDSOP-10-1 Package / Case 10-PowerSOP Module
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